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february 2009 rev 1 1/16 16 STD13NM60N stf13nm60n, stp13nm60n n-channel 600 v, 0.28 ? , 11 a mdmesh? ii power mosfet dpak, to-220fp, to-220 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices implements second generation mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d STD13NM60N 650 v < 0.36 ? 11 a stf13nm60n 650 v < 0.36 ? 11 a stp13nm60n 650 v < 0.36 ? 11 a to-220 to-220fp dpak 1 3 1 2 3 1 2 3 3# $ ' 3 table 1. device summary order code marking package packaging STD13NM60N 13nm60n dpak tape and reel stf13nm60n 13nm60n to-220fp tube stp13nm60n 13nm60n to-220 tube www.st.com
contents STD13NM60N, stf13nm60n, stp13nm60n 2/16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD13NM60N, stf13nm60n, stp13nm60n electrical ratings 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220 to-220fp v ds drain-source voltage (v gs = 0) 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 11 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 6.93 6.93 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 44 (1) a p tot total dissipation at t c = 25 c 90 25 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v dd 80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature ?55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak to-220 to-220fp rthj-case thermal resistance junction-case max 1.39 5 c/w rthj-amb thermal resistance ju nction-ambient max 100 62.5 c/w rthj-pcb thermal resistan ce junction-pcb max 50 t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj
electrical characteristics STD13NM60N, stf13nm60n, stp13nm60n 4/16 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v dv/dt (1) 1. characteristic value at turn off on inductive load drain source voltage slope v dd =480 v, i d = 9 a, v gs =10 v 45 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 5.5 a 7 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 790 60 3.6 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v 135 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 19) 30 15 4 nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain 4.7 ?
STD13NM60N, stf13nm60n, stp13nm60n electrical characteristics 5/16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 300 v, i d = 5.5 a r g =4.7 ? v gs = 10 v (see figure 18) 3 8 30 10 ns ns ns ns table 8. source drain diode symbol parameter test co nditions min typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v (see figure 20) 230 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 9 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 20) 290 190 17 ns c a
electrical characteristics STD13NM60N, stf13nm60n, stp13nm60n 6/16 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for dpak figure 7. thermal impedance for dpak i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 25 8 v1 i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 259v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 260v1
STD13NM60N, stf13nm60n, stp13nm60n electrical characteristics 7/16 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 v g s =10v 3 0 am0 33 00v1 i d 15 10 5 0 0 4 v g s (v) 8 (a) 2 6 10 20 25 am0 33 01v1 g f s 2.5 1.5 0.5 0 6 i d (a) ( s ) 2 10 4 8 3 .5 4.5 5.5 6.5 7.5 8 .5 t j =-50c t j =25c t j =150c am0 33 0 3 v1 r d s (on) 0.26 0.24 0.22 0.2 0 4 i d (a) ( ? ) 2 6 0.2 8 0. 3 0 i d =5.5a v g s =10v 8 10 am0 33 02v1 v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =4 8 0v i d =11a 3 0 12 3 00 200 100 0 400 500 v d s v g s am0 33 05v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 33 04v1
electrical characteristics STD13NM60N, stf13nm60n, stp13nm60n 8/16 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 am0 33 06v1 r d s (on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1.7 1.5 1. 3 1.9 2.1 am0 33 07v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 tj=-50c tj=25c tj=150c am0 33 09v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 125 am0 33 0 8 v1
STD13NM60N, stf13nm60n, stp13nm60n test circuits 9/16 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefor m figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD13NM60N, stf13nm60n, stp13nm60n 10/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STD13NM60N, stf13nm60n, stp13nm60n package mechanical data 11/16 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
package mechanical data STD13NM60N, stf13nm60n, stp13nm60n 12/16 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
STD13NM60N, stf13nm60n, stp13nm60n package mechanical data 13/16 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
packaging mechanical data STD13NM60N, stf13nm60n, stp13nm60n 14/16 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
STD13NM60N, stf13nm60n, stp13nm60n revision history 15/16 6 revision history table 9. document revision history date revision changes 23-feb-2009 1 first release
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